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| SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 FEBRUARY 1996 FEATURES * Low saturation voltage * Excellent hFE specified up to 2A FZT753 C E COMPLEMENTARY TYPE PARTMARKING DETAIL PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL MIN. -120 V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 70 100 55 25 100 -0.17 -0.30 -0.9 -0.8 200 200 170 55 140 -100 -5 -0.1 -10 -0.1 -0.3 -0.5 -1.25 -1.0 300 MHz FZT653 FZT753 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. MAX. VALUE -120 -100 -5 -6 -2 2 -55 to +150 UNIT V V V A A A C B ABSOLUTE MAXIMUM RATINGS. UNIT V V V A A W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). CONDITIONS. IC=-100A IC=-10mA* IE=-100A VCB=-100V VCB=-100V,Tamb=100C VEB=-4V IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-1A, IB=-100mA* IC=-1A, VCE=-2V* IC=-50mA, VCE =-2V* IC=-500mA, VCE =-2V* IC=-1A, VCE =-2V* IC=-2A, VCE =-2V* IC=-100mA, VCE=-5V f=100MHz VCB =-10V f=1MHz IC=-500mA, VCC =-10V IB1=IB2=-50mA Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Switching Times V V V V fT 30 pF Cobo ton 40 ns toff 600 ns *Measured under pulsed conditions. Pulse Width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 236 FZT753 TYPICAL CHARACTERISTICS 0.6 td tr tf I*=I* =I+/10 ts ns 1400 0.5 ns - (Volts) 0.4 Switching time 140 I+/I*=10 120 1200 100 1000 t@ tI 0.3 80 800 tB 600 V 0.2 60 tH 40 400 0.1 20 200 0 0 0.0001 0.001 0.01 0.1 0 0.1 1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 1.4 - (Volts) 225 1.2 - Gain 175 V+-=2V 1.0 I+/I*=10 125 h 75 0.6 0 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) V 0.8 IC - Collector Current (Amps) hFE v IC 10 VBE(sat) v IC Single Pulse T est at Tamb=25C 1.2 I+ - Collector Current (A) - (Volts) 1.0 V+ -=2V 1 0.8 DC 0.1 1s 100ms 10ms 1ms 100s V 0.6 0.4 0.01 0.0001 0.001 0.01 0.1 1 10 0.1 1 10 100 IC - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC 3 - 237 Safe Operating Area |
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